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WMK115N15HG2

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The WMK115N15HG2 from First Silicon is a MOSFET with Continous Drain Current 57 to 90 A, Drain Source Resistance 9.1 to 11.5 milli-ohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for WMK115N15HG2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    WMK115N15HG2
  • Manufacturer
    First Silicon
  • Description
    -20 to 20 V, 57 to 90 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    57 to 90 A
  • Drain Source Resistance
    9.1 to 11.5 milli-ohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    45 nC
  • Switching Speed
    18 to 32 ns
  • Power Dissipation
    173.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Hard Switching and High Speed Circuit, DC/DC Converters, Synchronous Rectification in SMPS
  • Note
    Input Capacitance :- 3520 pF
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