SSF10N65

Note : Your request will be directed to FrelTec.

The SSF10N65 from FrelTec is a MOSFET with Continous Drain Current 6 to 10 A, Drain Source Resistance 0.9 to 2.02 ohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for SSF10N65 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSF10N65
  • Manufacturer
    FrelTec
  • Description
    650 V, 6 to 10 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6 to 10 A
  • Drain Source Resistance
    0.9 to 2.02 ohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    22.98 nC
  • Switching Speed
    21.60 to 56.88 ns
  • Power Dissipation
    156 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 1186 pF

Technical Documents

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