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BL1012BV

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The BL1012BV from GALAXY CENTURY MICROELECTRONICS is a MOSFET with Continous Drain Current 0.1 A, Drain Source Resistance 250 to 546 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage ±10 V, Gate Source Threshold Voltage 1 V. Tags: Surface Mount. More details for BL1012BV can be seen below.

Product Specifications

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Product Details

  • Part Number
    BL1012BV
  • Manufacturer
    GALAXY CENTURY MICROELECTRONICS
  • Description
    ±10 V, 0.1 A Dual N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.1 A
  • Drain Source Resistance
    250 to 546 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    ±10 V
  • Gate Source Threshold Voltage
    1 V
  • Power Dissipation
    0.15 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-553
View details on the manufacturer's website
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