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BL1415DW

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The BL1415DW from GALAXY CENTURY MICROELECTRONICS is a MOSFET with Continous Drain Current -0.36 to 0.78 A, Drain Source Resistance 1200 to 5000 milli-ohm, Drain Source Breakdown Voltage -30 to 30 V, Gate Source Voltage ±10 V, Gate Source Threshold Voltage -1 to 1 V. Tags: Surface Mount. More details for BL1415DW can be seen below.

Product Specifications

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Product Details

  • Part Number
    BL1415DW
  • Manufacturer
    GALAXY CENTURY MICROELECTRONICS
  • Description
    ±10 V, -0.36 to 0.78 A Dual N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.36 to 0.78 A
  • Drain Source Resistance
    1200 to 5000 milli-ohm
  • Drain Source Breakdown Voltage
    -30 to 30 V
  • Gate Source Voltage
    ±10 V
  • Gate Source Threshold Voltage
    -1 to 1 V
  • Gate Charge
    0.8 to 1.22 nC
  • Power Dissipation
    0.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Military, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363

Technical Documents
View details on the manufacturer's website
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