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BL4167-6L

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The BL4167-6L from GALAXY CENTURY MICROELECTRONICS is a MOSFET with Continous Drain Current -2.2 to 2.6 A, Drain Source Resistance 90 to 300 milli-ohm, Drain Source Breakdown Voltage -30 to 30 V, Gate Source Voltage ±12 V, Gate Source Threshold Voltage -1.3 to 1.4 V. Tags: Surface Mount. More details for BL4167-6L can be seen below.

Product Specifications

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Product Details

  • Part Number
    BL4167-6L
  • Manufacturer
    GALAXY CENTURY MICROELECTRONICS
  • Description
    ±12 V, -2.2 to 2.6 A Dual N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -2.2 to 2.6 A
  • Drain Source Resistance
    90 to 300 milli-ohm
  • Drain Source Breakdown Voltage
    -30 to 30 V
  • Gate Source Voltage
    ±12 V
  • Gate Source Threshold Voltage
    -1.3 to 1.4 V
  • Gate Charge
    3.7 to 6 nC
  • Power Dissipation
    0.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Military, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-6L

Technical Documents
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