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BL6601-6L

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The BL6601-6L from GALAXY CENTURY MICROELECTRONICS is a MOSFET with Continous Drain Current -2.5 to 3.8 A, Drain Source Resistance 55 to 190 milli-ohm, Drain Source Breakdown Voltage -30 to 30 V, Gate Source Voltage ±12 V, Gate Source Threshold Voltage -1.2 to 1.5 V. Tags: Surface Mount. More details for BL6601-6L can be seen below.

Product Specifications

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Product Details

  • Part Number
    BL6601-6L
  • Manufacturer
    GALAXY CENTURY MICROELECTRONICS
  • Description
    ±12 V, -2.5 to 3.8 A Dual N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -2.5 to 3.8 A
  • Drain Source Resistance
    55 to 190 milli-ohm
  • Drain Source Breakdown Voltage
    -30 to 30 V
  • Gate Source Voltage
    ±12 V
  • Gate Source Threshold Voltage
    -1.2 to 1.5 V
  • Gate Charge
    12.3 to 13.8 nC
  • Power Dissipation
    0.85 to 1.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Military, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-6L
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
View details on the manufacturer's website
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