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BSS138PDW

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The BSS138PDW from GALAXY CENTURY MICROELECTRONICS is a MOSFET with Continous Drain Current 0.29 to 0.36 A, Drain Source Resistance 1000 to 4500 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage ±20 V, Gate Source Threshold Voltage 0.8 to 1.5 V. Tags: Surface Mount. More details for BSS138PDW can be seen below.

Product Specifications

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Product Details

  • Part Number
    BSS138PDW
  • Manufacturer
    GALAXY CENTURY MICROELECTRONICS
  • Description
    ±20 V, 0.29 to 0.36 A Dual N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.29 to 0.36 A
  • Drain Source Resistance
    1000 to 4500 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    ±20 V
  • Gate Source Threshold Voltage
    0.8 to 1.5 V
  • Gate Charge
    4 nC
  • Power Dissipation
    0.35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Military, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Applications
    DC-DC converters, Power management functions, Battery operated systems and solid-state relays, Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors

Technical Documents
View details on the manufacturer's website
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