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GBLH6601-5DL8

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The GBLH6601-5DL8 from GALAXY CENTURY MICROELECTRONICS is a MOSFET with Continous Drain Current -12 to 16 A, Drain Source Resistance 40 to 125 milli-ohm, Drain Source Breakdown Voltage -60 to 60 V, Gate Source Voltage ±20 V, Gate Source Threshold Voltage -2.5 to 2.5 V. Tags: Surface Mount. More details for GBLH6601-5DL8 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GBLH6601-5DL8
  • Manufacturer
    GALAXY CENTURY MICROELECTRONICS
  • Description
    ±20 V, -12 to 16 A Dual N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -12 to 16 A
  • Drain Source Resistance
    40 to 125 milli-ohm
  • Drain Source Breakdown Voltage
    -60 to 60 V
  • Gate Source Voltage
    ±20 V
  • Gate Source Threshold Voltage
    -2.5 to 2.5 V
  • Gate Charge
    20 to 20.4 nC
  • Power Dissipation
    26 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Military, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN5X6-8LC
  • Applications
    Synchronous Rectification, Motor Control, Protable equipment application

Technical Documents
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