The GBLH6601-5DL8 from GALAXY CENTURY MICROELECTRONICS is a MOSFET with Continous Drain Current -12 to 16 A, Drain Source Resistance 40 to 125 milli-ohm, Drain Source Breakdown Voltage -60 to 60 V, Gate Source Voltage ±20 V, Gate Source Threshold Voltage -2.5 to 2.5 V. Tags: Surface Mount. More details for GBLH6601-5DL8 can be seen below.