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G2R50MT33K

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The G2R50MT33K from GeneSiC Semiconductor is a MOSFET with Continous Drain Current 32 to 63 A, Drain Source Resistance 50 to 105 milliohm, Drain Source Breakdown Voltage 3300 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 2.4 to 3.5 V. Tags: Through Hole. More details for G2R50MT33K can be seen below.

Product Specifications

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Product Details

  • Part Number
    G2R50MT33K
  • Manufacturer
    GeneSiC Semiconductor
  • Description
    3300 V, 32 to 63 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    32 to 63 A
  • Drain Source Resistance
    50 to 105 milliohm
  • Drain Source Breakdown Voltage
    3300 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    2.4 to 3.5 V
  • Gate Charge
    340 nC
  • Power Dissipation
    536 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-4
  • Applications
    Traction, Solar string inverters, EV fast chargers, Pulse Power, SMPS, Energy storage, Solid state Transformers, Solid state circuit Breakers

Technical Documents
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