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12N10G

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The 12N10G from Goford Semiconductor is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 79 to 95 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Through Hole, Surface Mount. More details for 12N10G can be seen below.

Product Specifications

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Product Details

  • Part Number
    12N10G
  • Manufacturer
    Goford Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    79 to 95 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    15.5 nC
  • Power Dissipation
    30 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole, Surface Mount
  • Package
    TO-251, TO-252
  • Applications
    Battery switch, DC/DC converter
View details on the manufacturer's website
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