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18N20F

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The 18N20F from Goford Semiconductor is a MOSFET with Continous Drain Current 18 A, Drain Source Resistance 130 to 190 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Through Hole. More details for 18N20F can be seen below.

Product Specifications

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Product Details

  • Part Number
    18N20F
  • Manufacturer
    Goford Semiconductor
  • Description
    200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    18 A
  • Drain Source Resistance
    130 to 190 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    17.3 nC
  • Power Dissipation
    110 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    DC-DC & DC-AC Converters for telecom, industrial and consumer environment, Uninterruptible Power Supply (UPS), Switch Mode Low Power Supplies, Industrial Actuators

Technical Documents
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