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4N60A

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4N60A Image

The 4N60A from Goford Semiconductor is a MOSFET with Continous Drain Current 2.78 to 4 A, Drain Source Resistance 1950 to 2300 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount, Through Hole. More details for 4N60A can be seen below.

Product Specifications

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Product Details

  • Part Number
    4N60A
  • Manufacturer
    Goford Semiconductor
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.78 to 4 A
  • Drain Source Resistance
    1950 to 2300 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    15.3 nC
  • Power Dissipation
    44.6 to 100 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount, Through Hole
  • Package
    TO-220, TO-220F, TO-251, TO-252
  • Applications
    High frequency switching mode power supply, Uninterruptible Power Supply (UPS), Electronic ballasts

Technical Documents
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