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5N30A

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The 5N30A from Goford Semiconductor is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 1100 to 1300 milliohm, Drain Source Breakdown Voltage 300 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for 5N30A can be seen below.

Product Specifications

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Product Details

  • Part Number
    5N30A
  • Manufacturer
    Goford Semiconductor
  • Description
    300 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5 A
  • Drain Source Resistance
    1100 to 1300 milliohm
  • Drain Source Breakdown Voltage
    300 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    6.85 nC
  • Power Dissipation
    44 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    DC-DC & DC-AC Converters for telecom, industrial and consumer environment, Uninterruptible Power Supply (UPS), Switch Mode Low Power Supplies, Industrial Actuators
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