The 60N06 from Goford Semiconductor is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 14 to 21 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for 60N06 can be seen below.