1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Goford Semiconductor
  6. 8N60F

8N60F

Download Datasheet Request Quote

Note : Your request will be directed to Goford Semiconductor.

8N60F Image

The 8N60F from Goford Semiconductor is a MOSFET with Continous Drain Current 4.5 to 7.5 A, Drain Source Resistance 1000 to 1200 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for 8N60F can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    8N60F
  • Manufacturer
    Goford Semiconductor
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.5 to 7.5 A
  • Drain Source Resistance
    1000 to 1200 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    30 nC
  • Power Dissipation
    165 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products