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A2T

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A2T Image

The A2T from Goford Semiconductor is a MOSFET with Continous Drain Current 5.2 A, Drain Source Resistance 22 to 32 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.5 V. Tags: Surface Mount. More details for A2T can be seen below.

Product Specifications

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Product Details

  • Part Number
    A2T
  • Manufacturer
    Goford Semiconductor
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.2 A
  • Drain Source Resistance
    22 to 32 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.5 V
  • Gate Charge
    11 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Battery protection, Load switch, Power management

Technical Documents
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