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G01P15LL

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The G01P15LL from Goford Semiconductor is a MOSFET with Continous Drain Current -1 A, Drain Source Resistance 770 to 1200 milliohm, Drain Source Breakdown Voltage -150 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -4 to -1.2 V. Tags: Surface Mount. More details for G01P15LL can be seen below.

Product Specifications

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Product Details

  • Part Number
    G01P15LL
  • Manufacturer
    Goford Semiconductor
  • Description
    -150 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1 A
  • Drain Source Resistance
    770 to 1200 milliohm
  • Drain Source Breakdown Voltage
    -150 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -4 to -1.2 V
  • Gate Charge
    19.2 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-6L
  • Applications
    Power switch, DC/DC converters

Technical Documents
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