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G08P02TS

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The G08P02TS from Goford Semiconductor is a MOSFET with Continous Drain Current -8.2 A, Drain Source Resistance 7 to 14 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.9 to 0.55 V. Tags: Surface Mount. More details for G08P02TS can be seen below.

Product Specifications

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Product Details

  • Part Number
    G08P02TS
  • Manufacturer
    Goford Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -8.2 A
  • Drain Source Resistance
    7 to 14 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.9 to 0.55 V
  • Gate Charge
    29 nC
  • Power Dissipation
    1.05 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSSOP-8
  • Applications
    Power switch, DC/DC converters
View details on the manufacturer's website
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