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G1003B

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The G1003B from Goford Semiconductor is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 135 to 180 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for G1003B can be seen below.

Product Specifications

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Product Details

  • Part Number
    G1003B
  • Manufacturer
    Goford Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5 A
  • Drain Source Resistance
    135 to 180 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    30 nC
  • Power Dissipation
    3.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3L
  • Applications
    PWM applications, Load switch, Power management

Technical Documents
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