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G100N04

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The G100N04 from Goford Semiconductor is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 5.2 to 8.5 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 1.9 V. Tags: Through Hole. More details for G100N04 can be seen below.

Product Specifications

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Product Details

  • Part Number
    G100N04
  • Manufacturer
    Goford Semiconductor
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    5.2 to 8.5 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 1.9 V
  • Gate Charge
    50 nC
  • Power Dissipation
    90 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    PWM, Load Switching
View details on the manufacturer's website
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