The G1208 from Goford Semiconductor is a MOSFET with Continous Drain Current -8 A, Drain Source Resistance 28 to 150 milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for G1208 can be seen below.