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G120P06M

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The G120P06M from Goford Semiconductor is a MOSFET with Continous Drain Current -120 A, Drain Source Resistance 7 to 8.5 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for G120P06M can be seen below.

Product Specifications

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Product Details

  • Part Number
    G120P06M
  • Manufacturer
    Goford Semiconductor
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -120 A
  • Drain Source Resistance
    7 to 8.5 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    230 nC
  • Power Dissipation
    277 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263
  • Applications
    Power switch, DC/DC converters

Technical Documents
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