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G1601

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G1601 Image

The G1601 from Goford Semiconductor is a MOSFET with Continous Drain Current -2.6 A, Drain Source Resistance 55 to 110 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1 to -0.5 V. Tags: Surface Mount. More details for G1601 can be seen below.

Product Specifications

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Product Details

  • Part Number
    G1601
  • Manufacturer
    Goford Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.6 A
  • Drain Source Resistance
    55 to 110 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1 to -0.5 V
  • Gate Charge
    3.3 to 12 nC
  • Power Dissipation
    0.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    PWM applications, Load switch, Power management

Technical Documents
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