The G16N03S from Goford Semiconductor is a MOSFET with Continous Drain Current 16 A, Drain Source Resistance 6.7 to 15 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for G16N03S can be seen below.