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G18NP06Y

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The G18NP06Y from Goford Semiconductor is a MOSFET with Continous Drain Current -18 to 18 A, Drain Source Resistance 26 to 45 milliohm, Drain Source Breakdown Voltage -60 to 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3.5 to 2.5 V. Tags: Surface Mount. More details for G18NP06Y can be seen below.

Product Specifications

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Product Details

  • Part Number
    G18NP06Y
  • Manufacturer
    Goford Semiconductor
  • Description
    -60 to 60 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -18 to 18 A
  • Drain Source Resistance
    26 to 45 milliohm
  • Drain Source Breakdown Voltage
    -60 to 60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3.5 to 2.5 V
  • Gate Charge
    22 to 25 nC
  • Power Dissipation
    45 to 50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252-4
  • Applications
    Power switch, DC/DC converters

Technical Documents
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