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G1N50

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The G1N50 from Goford Semiconductor is a MOSFET with Continous Drain Current 1 A, Drain Source Resistance 8750 to 10000 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for G1N50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    G1N50
  • Manufacturer
    Goford Semiconductor
  • Description
    500 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1 A
  • Drain Source Resistance
    8750 to 10000 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    4.53 nC
  • Power Dissipation
    18.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-89
  • Applications
    DC-DC & DC-AC Converters for telecom, industrial and consumer environment, Uninterruptible Power Supply (UPS), Switch Mode Low Power Supplies, Industrial Actuators
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