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G2003A

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The G2003A from Goford Semiconductor is a MOSFET with Continous Drain Current 3 A, Drain Source Resistance 430 to 560 milliohm, Drain Source Breakdown Voltage 190 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for G2003A can be seen below.

Product Specifications

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Product Details

  • Part Number
    G2003A
  • Manufacturer
    Goford Semiconductor
  • Description
    190 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3 A
  • Drain Source Resistance
    430 to 560 milliohm
  • Drain Source Breakdown Voltage
    190 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    12 nC
  • Power Dissipation
    1.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3L
  • Applications
    Power switching application

Technical Documents
View details on the manufacturer's website
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