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G2305

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G2305 Image

The G2305 from Goford Semiconductor is a MOSFET with Continous Drain Current -4.8 A, Drain Source Resistance 45 to 70 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1 to -0.45 V. Tags: Surface Mount. More details for G2305 can be seen below.

Product Specifications

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Product Details

  • Part Number
    G2305
  • Manufacturer
    Goford Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.8 A
  • Drain Source Resistance
    45 to 70 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1 to -0.45 V
  • Gate Charge
    7.8 nC
  • Power Dissipation
    1.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Power switch, DC/DC converters

Technical Documents
View details on the manufacturer's website
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