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G28N02T

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The G28N02T from Goford Semiconductor is a MOSFET with Continous Drain Current 28 A, Drain Source Resistance 6.7 to 8.7 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 0.9 V. Tags: Through Hole. More details for G28N02T can be seen below.

Product Specifications

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Product Details

  • Part Number
    G28N02T
  • Manufacturer
    Goford Semiconductor
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    28 A
  • Drain Source Resistance
    6.7 to 8.7 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 0.9 V
  • Gate Charge
    42 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Power switch, DC/DC converters

Technical Documents
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