The G29 from Goford Semiconductor is a P-Channel Enhancement Mode Power MOSFET that is ideal for DC/DC converters and power switch applications. It has a drain-source breakdown voltage of over -15 V, a gate threshold voltage of -0.55 V, and a drain-source on-resistance of less than 56 milli-ohms. This RoHS-compliant MOSFET employs advanced trench technology to provide excellent RDS(ON) and low gate charge for enhancing current handling capability while reducing switching losses. It is available in a surface-mount package that measures 2.80 x 2.25 mm.
