1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Goford Semiconductor
  6. G5N20J

G5N20J

Download Datasheet Request Quote

Note : Your request will be directed to Goford Semiconductor.

G5N20J Image

The G5N20J from Goford Semiconductor is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 440 to 580 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Through Hole. More details for G5N20J can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    G5N20J
  • Manufacturer
    Goford Semiconductor
  • Description
    200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5 A
  • Drain Source Resistance
    440 to 580 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    10.8 nC
  • Power Dissipation
    78 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-251
  • Applications
    DC Motor Control and Class D Amplifier, Uninterruptible Power Supply (UPS), Automotive

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products