The G60N10K from Goford Semiconductor is a MOSFET with Continous Drain Current 60 A, Drain Source Resistance 22 to 30 milliohm, Drain Source Breakdown Voltage 90 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 2.5 V. Tags: Surface Mount. More details for G60N10K can be seen below.