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G630J

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The G630J from Goford Semiconductor is a MOSFET with Continous Drain Current 11 A, Drain Source Resistance 210 to 280 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Through Hole. More details for G630J can be seen below.

Product Specifications

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Product Details

  • Part Number
    G630J
  • Manufacturer
    Goford Semiconductor
  • Description
    200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11 A
  • Drain Source Resistance
    210 to 280 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    11.8 nC
  • Power Dissipation
    83 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-251
  • Applications
    DC Motor Control and Class D Amplifier, Uninterruptible Power Supply (UPS), Automotive

Technical Documents
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