1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Goford Semiconductor
  6. G65P06K

G65P06K

Download Datasheet Request Quote

Note : Your request will be directed to Goford Semiconductor.

G65P06K Image

The G65P06K from Goford Semiconductor is a MOSFET with Continous Drain Current -65 A, Drain Source Resistance 13 to 18 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3.5 to -2 V. Tags: Surface Mount. More details for G65P06K can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    G65P06K
  • Manufacturer
    Goford Semiconductor
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -65 A
  • Drain Source Resistance
    13 to 18 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3.5 to -2 V
  • Gate Charge
    75 nC
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Power switch, DC/DC converters

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products