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G70N04T

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The G70N04T from Goford Semiconductor is a MOSFET with Continous Drain Current 70 A, Drain Source Resistance 6 to 9 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.1 to 2.4 V. Tags: Through Hole. More details for G70N04T can be seen below.

Product Specifications

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Product Details

  • Part Number
    G70N04T
  • Manufacturer
    Goford Semiconductor
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    70 A
  • Drain Source Resistance
    6 to 9 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.1 to 2.4 V
  • Gate Charge
    50 nC
  • Power Dissipation
    104 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Power switch, DC/DC converters

Technical Documents
View details on the manufacturer's website
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