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G9N40T

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The G9N40T from Goford Semiconductor is a MOSFET with Continous Drain Current 9 A, Drain Source Resistance 515 to 607 milliohm, Drain Source Breakdown Voltage 400 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for G9N40T can be seen below.

Product Specifications

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Product Details

  • Part Number
    G9N40T
  • Manufacturer
    Goford Semiconductor
  • Description
    400 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9 A
  • Drain Source Resistance
    515 to 607 milliohm
  • Drain Source Breakdown Voltage
    400 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    22.13 nC
  • Power Dissipation
    100 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    DC-DC & DC-AC Converters for telecom, industrial and consumer environment, Uninterruptible Power Supply (UPS), Switch Mode Low Power Supplies, Industrial Actuators
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