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GT088N06T

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The GT088N06T from Goford Semiconductor is a MOSFET with Continous Drain Current 60 A, Drain Source Resistance 8 to 13 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.4 V. Tags: Through Hole. More details for GT088N06T can be seen below.

Product Specifications

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Product Details

  • Part Number
    GT088N06T
  • Manufacturer
    Goford Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    60 A
  • Drain Source Resistance
    8 to 13 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.4 V
  • Gate Charge
    24 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Synchronous Rectification in SMPS or LED Driver, UPS, Motor Control, BMS, High Frequency Circuit

Technical Documents
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