The GT090N06S from Goford Semiconductor is a MOSFET with Continous Drain Current 14 A, Drain Source Resistance 6.8 to 12.5 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.4 V. Tags: Surface Mount. More details for GT090N06S can be seen below.