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GT500P10M

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The GT500P10M from Goford Semiconductor is a MOSFET with Continous Drain Current -30 A, Drain Source Resistance 37.5 to 55 milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for GT500P10M can be seen below.

Product Specifications

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Product Details

  • Part Number
    GT500P10M
  • Manufacturer
    Goford Semiconductor
  • Description
    -100 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -30 A
  • Drain Source Resistance
    37.5 to 55 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    34.5 nC
  • Power Dissipation
    150 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263
  • Applications
    Synchronous Rectification in SMPS or LED Driver, UPS, Motor Control, BMS, High Frequency Circuit

Technical Documents
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