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ES15N10G

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The ES15N10G from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 9.5 to 12 A, Drain Source Resistance 85 to 135 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.0 V. Tags: Through Hole. More details for ES15N10G can be seen below.

Product Specifications

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Product Details

  • Part Number
    ES15N10G
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    100 V, 9.5 to 12 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9.5 to 12 A
  • Drain Source Resistance
    85 to 135 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.0 V
  • Power Dissipation
    35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion

Technical Documents
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