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ES2310

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The ES2310 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 2.4 to 3.2 A, Drain Source Resistance 58 to 110 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.9 to 2.0 V. Tags: Surface Mount. More details for ES2310 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ES2310
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    60 V, 2.4 to 3.2 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.4 to 3.2 A
  • Drain Source Resistance
    58 to 110 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.9 to 2.0 V
  • Gate Charge
    8.8 nC
  • Switching Speed
    4.5 to 12.5 ns
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 400 pF

Technical Documents
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