The ES4435 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current -8.0 to -10.5 A, Drain Source Resistance 13.5 to 27 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -1.0 to -2.0 V. Tags: Surface Mount. More details for ES4435 can be seen below.