The ES4435A from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current -7.9 to -10.0 A, Drain Source Resistance 17.5 to 30 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.1 to -1.9 V. Tags: Surface Mount. More details for ES4435A can be seen below.