The ES5N10AB from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 2.2 to 2.8 A, Drain Source Resistance 100 to 140 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Surface Mount. More details for ES5N10AB can be seen below.