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ES6602

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The ES6602 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 4.0 to 5.0 A, Drain Source Resistance 25 to 43 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.0 V. Tags: Surface Mount. More details for ES6602 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ES6602
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    30 V, 4.0 to 5.0 A, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4.0 to 5.0 A
  • Drain Source Resistance
    25 to 43 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.0 V
  • Gate Charge
    9.8 nC
  • Switching Speed
    3.2 to 24 ns
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-6L
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 255 pF

Technical Documents
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