The ESD4185 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current -34 to -45 A, Drain Source Resistance 13 to 20 milli-ohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.0 to -2.0 V. Tags: Surface Mount. More details for ESD4185 can be seen below.