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ESD536

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The ESD536 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 30 to 39 A, Drain Source Resistance 7.0 to 18.0 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 1.8 V. Tags: Surface Mount. More details for ESD536 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ESD536
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    30 V, 30 to 39 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    30 to 39 A
  • Drain Source Resistance
    7.0 to 18.0 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 1.8 V
  • Gate Charge
    15 nC
  • Switching Speed
    7.6 to 18 ns
  • Power Dissipation
    31 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 1150 pF

Technical Documents
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