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ESJNV80R900

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The ESJNV80R900 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 1.7 to 3.9 A, Drain Source Resistance 0.76 to 0.90 ohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Through Hole. More details for ESJNV80R900 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ESJNV80R900
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    800 V, 1.7 to 3.9 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.7 to 3.9 A
  • Drain Source Resistance
    0.76 to 0.90 ohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    16 nC
  • Switching Speed
    14 to 45 ns
  • Power Dissipation
    28 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 580 pF

Technical Documents
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