The ESN6312 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 95 to 123 A, Drain Source Resistance 1.7 to 3.6 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.1 to 2.2 V. Tags: Surface Mount. More details for ESN6312 can be seen below.