The ESNA02R125E from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 1.8 to 2.3 A, Drain Source Resistance 80 to 225 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.5 to 1.0 V. Tags: Surface Mount. More details for ESNA02R125E can be seen below.