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ESNA02R125E

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The ESNA02R125E from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 1.8 to 2.3 A, Drain Source Resistance 80 to 225 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.5 to 1.0 V. Tags: Surface Mount. More details for ESNA02R125E can be seen below.

Product Specifications

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Product Details

  • Part Number
    ESNA02R125E
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    20 V, 1.8 to 2.3 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.8 to 2.3 A
  • Drain Source Resistance
    80 to 225 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.5 to 1.0 V
  • Gate Charge
    3.5 nC
  • Switching Speed
    4.5 to 9.0 ns
  • Power Dissipation
    0.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-323
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 195 pF

Technical Documents
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